upa2708gr Renesas Electronics Corporation., upa2708gr Datasheet
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upa2708gr
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upa2708gr Summary of contents
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DESCRIPTION The µ PA2708GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance R = 5.5 mΩ MAX DS(on ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 T - Ambient Temperature - A TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 ...
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GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 2 0.5 DS Pulsed 0 - 100 T - Channel Temperature - °C ch DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 Pulsed ...
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SWITCHING CHARACTERISTICS 1000 t d(off) 100 d(on Ω 0 Drain Current - A D SOURCE ...
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PACKAGE DRAWING (Unit: mm) Power SOP8 Source 4 ; Gate Drain 6.0 ±0 4.4 5.37 MAX. 0.5 ±0.2 1.27 0.78 MAX. +0.10 0.40 0.12 M –0.05 EQUIVALENT ...
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The information in this document is current as of May, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...