upa2728 Renesas Electronics Corporation., upa2728 Datasheet

upa2728

Manufacturer Part Number

upa2728

Description

Switching N-channel Power Mos Fet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2728.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

upa2728GR

Manufacturer:

RENESAS/瑞萨

Quantity:

20 000

Current page: 1 of 6
Download datasheet (165Kb)

Document No. G18295EJ1V0DS00 (1st edition)

Date Published March 2007 NS CP(K)

Printed in Japan

FEATURES

• Low on-state resistance

• Low gate to drain charge

• Built-in gate protection diode

• Small and surface mount package (Power SOP8)

• RoHS Compliant

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in external electrode and other parts).

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

DESCRIPTION

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 10 sec)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10

designed for DC/DC converter and power management

applications of notebook computer.

The

PA2728GR-E1-A

PA2728GR-E2-A

PA2728GR-E1-AT

PA2728GR-E2-AT

DS(on)1

DS(on)2

= 3.5 nC TYP. (V

2. Mounted on glass epoxy board of 1 inch

3. Starting T

PART NUMBER

PA2728GR is N-channel MOS Field Effect Transistor

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

= 10.5 mΩ MAX. (V

= 18 mΩ MAX. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Note

s, Duty Cycle ≤ 1%

Note1

= 25°C, V

Note2

Note3

= 15 V, I

Note3

= 0 V)

= 4.5 V, I

= 10 V, I

LEAD PLATING

N-CHANNEL POWER MOS FET

= 15 V, R

Pure Sn

= 13 A)

Sn-Bi

Note2

= 7.0 A)

= 25°C, All terminals are connected.)

= 25 Ω, V

D(DC)

D(pulse)

stg

DSS

GSS

SWITCHING

DATA SHEET

x 0.8 mm

MOS FIELD EFFECT TRANSISTOR

Tape 2500 p/reel

= 20 → 0 V, L = 100

PACKING

−55 to +150

±25

±13

±52

150

1.1

2.5

PACKAGE DRAWING (Unit: mm)

5.37 MAX.

°C

0.40

1.27

+0.10

–0.05

PA2728GR

0.78 MAX.

Power SOP8

0.08 g TYP.

PACKAGE

0.12 M

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1, 2, 3

5, 6, 7, 8: Drain

0.5 ±0.2

6.0 ±0.3

4.4

: Source

: Gate

Source

Drain

Body

Diode

0.8

2006, 2007

0.10

Related parts for upa2728

upa2728 Summary of contents

Page 1

N-CHANNEL POWER MOS FET DESCRIPTION The μ PA2728GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance R = 10.5 mΩ MAX ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

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upa2728 Renesas Electronics Corporation., upa2728 Datasheet

upa2728

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upa2728 Summary of contents

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