upa2721agr Renesas Electronics Corporation., upa2721agr Datasheet - Page 2

• Manufacturer Part Number: upa2721agr
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
= 20
PG.
→
0 V
CHARACTERISTICS
PG.
I
G
V
= 2 mA
50
DD
R
Ω
D.U.T.
G
I
D
= 25
50
I
D.U.T.
Ω
AS
Ω
Note
Note
BV
DSS
Starting T
R
V
Note
DD
V
L
DS
L
V
DD
I
I
V
| y
R
R
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
ch
SYMBOL
DSS
GSS
d(on)
r
d(off)
f
rr
GS(off)
F(S-D)
DS(on)1
DS(on)2
iss
oss
rss
G
GS
GD
rr
fs
A
|
= 25°C, All terminals are connected.)
Data Sheet G18705EJ1V0DS
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
V
0
D
F
F
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
DD
GS
GS
G
= 19 A, V
= 19 A, V
τ = 1 s
Duty Cycle
= 19 A
= 10 Ω
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V,
= ±20 V, V
= 10 V, I
= 5.0 V, I
= 0 V,
= 15 V, I
= 10 V,
= 15 V,
= 5 V,
TEST CIRCUIT 2 SWITCHING TIME
PG.
μ
TEST CONDITIONS
τ
GS
GS
D
D
D
D
≤
D
μ
GS
= 0 V
= 0 V,
= 1 mA
= 10 A
= 10 A
= 10 A,
1%
s
DS
= 10 A
= 0 V
R
= 0 V
G
D.U.T.
R
V
DD
L
MIN.
V
Wave Form
V
Wave Form
1.5
11
GS
DS
V
V
V
GS
DS
0
DS
0
7100
TYP.
930
490
112
3.6
4.7
0.8
μ
33
31
32
52
20
20
41
44
10%
t
90%
d(on)
PA2721AGR
t
on
10% 10%
t
r
MAX.
±10
3.0
4.3
10
V
1
GS
t
d(off)
t
off
90%
UNIT
90%
t
f
mΩ
mΩ
μ
μ
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A