ao4464 Alpha & Omega Semiconductor, ao4464 Datasheet

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ao4464

Manufacturer Part Number
ao4464
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4464
Manufacturer:
AOS/ 万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4464 uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
Product AO4464 is Pb-free (meets ROHS & Sony
259 specifications). AO4464L is a Green Product
ordering option. AO4464 and AO4464L are
electrically identical.
AO4464
N-Channel Enhancement Mode Field Effect Transistor
A
S
S
S
G
DS(ON)
B
T
T
T
T
SOIC-8
A
A
A
A
=25°C
=70°C
=25°C
=70°C
and low gate charge. This
C
A
A
A
=25°C unless otherwise noted
D
D
D
D
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
D
R
R
DS
DS(ON)
DS(ON)
θJA
= 8.5A (V
θJL
(V) = 30V
< 26mΩ (V
< 40mΩ (V
G
Maximum
-55 to 150
±20
Typ
GS
8.5
7.1
2.1
30
50
31
59
16
3
= 10V)
D
S
GS
GS
= 10V)
= 4.5V)
Max
40
75
24
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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ao4464 Summary of contents

Page 1

... PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4464 is Pb-free (meets ROHS & Sony 259 specifications). AO4464L is a Green Product ordering option. AO4464 and AO4464L are electrically identical. ...

Page 2

... AO4464 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4464 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 4. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 30 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED ...

Page 4

... AO4464 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =8. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R 100µs DS(ON) limited 1ms 10.0 10ms 0.1s 1 =150°C J(Max) T =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ...

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