ao4454 Alpha & Omega Semiconductor, ao4454 Datasheet

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ao4454

Manufacturer Part Number
ao4454
Description
100v N-channel Mosfet Sdmos Tm
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4454
Manufacturer:
AOS/万代
Quantity:
20 000
Rev1: November 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
The AO4454 is fabricated with SDMOS
technology that combines excellent R
charge.The result is outstanding efficiency with controlled
switching behaviar. This universal technology is well
suited for PWM, load switching and general purpose
applications.
General Description
D
D
D
Top View
D
B
Parameter
C
S
C
T
T
T
T
S
A
A
A
A
SOIC-8
=25° C
=70° C
=25° C
=70° C
S
C
G
A
A D
A
Bottom View
=25° C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
DS(ON)
TM
trench
with low gate
Symbol
V
V
I
I
I
E
P
T
Symbol
D
DM
AS
www.aosmd.com
J
DS
GS
AS
D
, T
, I
R
R
, E
AR
STG
JA
JL
AR
V
I
R
R
100% UIS Tested
100% R
Product Summary
D
DS
DS(ON)
DS(ON)
(at V
Typ
31
59
16
(at V
(at V
GS
g
=10V)
Tested
GS
GS
Maximum
-55 to 150
=10V)
= 7V)
100
±25
6.5
5.3
3.1
46
28
39
2
G
100V N-Channel MOSFET
Max
40
75
24
D
S
100V
6.5A
< 36m
< 43m
AO4454
SDMOS
Units
Units
° C/W
° C/W
° C/W
Page 1 of 6
mJ
° C
W
V
V
A
A
TM

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ao4454 Summary of contents

Page 1

... General Description The AO4454 is fabricated with SDMOS technology that combines excellent R charge.The result is outstanding efficiency with controlled switching behaviar. This universal technology is well suited for PWM, load switching and general purpose applications. SOIC-8 Top View Bottom View Absolute Maximum Ratings T =25° ...

Page 2

... C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO4454 Min Typ Max Units 100 10 T =55° ...

Page 3

... V =10V GS 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =6.5A D 1.0E+01 40 1.0E+00 1.0E-01 125° C 1.0E-02 1.0E-03 1.0E-04 25° C 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4454 V =5V DS 125° C 25° (Volts =10V GS I =6. =4. = 100 125 150 ...

Page 4

... R DS(ON) 10.0 limited T =100° 1 =125° 0.0 0.01 0.0001 (s) A Figure 10: Maximum Forward Biased Safe 0.1 Pulse Width (s) www.aosmd.com AO4454 C iss C rss C oss 100 V (Volts) DS Figure 8: Capacitance Characteristics 10 s 100 s 1ms =150°C 10ms J(Max) =25°C ...

Page 5

... 800 1000 0 200 Figure 16: Diode Reverse Recovery Time and www.aosmd.com AO4454 100 1000 3 125ºC 2.5 2 25ºC 1.5 125ºC 1 25º ...

Page 6

... Vdd VDC - Vgs d(on 1 Vds + Vgs Vdd VDC Id - Vgs Diode Recovery Test Circuit & Waveforms Idt Vgs Isd Vdd VDC - Vds www.aosmd.com AO4454 Qg Qgd Charge 90% 10 d(off) t off DSS dI/ Vdd Page ...

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