ao4492l Alpha & Omega Semiconductor, ao4492l Datasheet

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ao4492l

Manufacturer Part Number
ao4492l
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
AO4492L
Manufacturer:
AOS
Quantity:
8 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4492L
N-Channel Enhancement Mode Field Effect Transistor
The AO4492L uses advanced trench technology to
provide excellent R
This device is suitable for high side switch in SMPS and
general purpose applications.
General Description
- RoHS Compliant
- Halogen Free
D
B
C
DS(ON)
C
T
T
T
T
C
C
C
C
=25°C
=70°C
=25°C
=70°C
with low gate charge.
SOIC-8
S
A
A D
A
G
=25°C unless otherwise noted
C
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
I
E
P
T
D
DM
AR
J
DS
GS
AR
D
, T
STG
Symbol
Features
V
I
R
R
D
R
DS
R
DS(ON)
DS(ON)
= 13A
θJA
θJL
(V) = 30V
< 14mΩ
< 9.5mΩ
Maximum
-55 to 150
Typ
±20
100
3.1
30
13
11
20
20
31
59
16
2
G
100% UIS Tested!
100% R
(V
(V
(V
Max
40
75
24
GS
GS
GS
= 10V)
= 10V)
= 4.5V)
g
Tested!
D
S
www.aosmd.com
Units
Units
°C/W
°C/W
°C/W
mJ
°C
W
V
V
A
A

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ao4492l Summary of contents

Page 1

... AO4492L N-Channel Enhancement Mode Field Effect Transistor General Description The AO4492L uses advanced trench technology to provide excellent R with low gate charge. DS(ON) This device is suitable for high side switch in SMPS and general purpose applications. - RoHS Compliant - Halogen Free SOIC Absolute Maximum Ratings T ...

Page 2

... AO4492L Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4492L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V Fig 1: On-Region Characteristics (Note Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & ...

Page 4

... AO4492L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =13A (nC) g Figure 7: Gate-Charge Characteristics 100 =150° =125° 0.000001 0.00001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability (Note C) 1000 100 10 1 0.00001 ...

Page 5

... AO4492L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =75°C/W 1 θJA 0.1 0.01 0.001 0.00001 0.0001 Figure 16: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse .Z .R θJA θJA Single Pulse 0.001 0.01 0.1 Pulse Width (s) 40 ...

Page 6

... AO4492L + VDC - Ig Vgs Rg Vgs Vds Id Vgs Rg Vgs Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & W aveform + Vds VDC - DUT Vgs Resistive Switching Test Circuit & Waveforms RL Vds Vds + DUT Vdd VDC - Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms ...

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