ao4494l Alpha & Omega Semiconductor, ao4494l Datasheet

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... AO4494L N-Channel Enhancement Mode Field Effect Transistor General Description The AO4494L combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is for PWM DS(ON) applications. - RoHS Compliant - Halogen Free SOIC Absolute Maximum Ratings T Parameter Drain-Source Voltage Gate-Source Voltage T =25° ...

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... AO4494L Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

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... AO4494L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 10V 5V 120 6V 100 (Volts) DS Fig 1: On-Region Characteristics (Note (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note 125° 25°C ...

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... AO4494L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V =18A (nC) g Figure 7: Gate-Charge Characteristics 90.00 T =25°C A 80.00 70.00 60.00 T =150°C A 50.00 40.00 30.00 20.00 0.000001 0.00001 0.0001 Time in avalanche Figure 12: Single Pulse Avalanche capability (Note C) 1000 100 10 1 0.00001 0.0001 ...

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... AO4494L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 D θJA J, =40°C/W θJA 0.1 0.01 0.001 0.00001 0.0001 0.001 Figure 16: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse θJA 40 Single Pulse 0.01 0.1 1 Pulse Width ( ...

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... AO4494L + VDC - Vgs Ig Vds Vgs Rg Vgs L Vds Id Vgs Rg Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & W aveform Vgs 10V + Vds VDC - DUT Resistive Switching Test Circuit & Waveforms RL Vds + DUT Vdd VDC - Vgs Unclamped Inductive Switching (UIS) Test Circuit & ...