ao4498e Alpha & Omega Semiconductor, ao4498e Datasheet

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ao4498e

Manufacturer Part Number
ao4498e
Description
30v N-channel Mosfet
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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AO4498E
Manufacturer:
AOS/ 万代
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20 000
Part Number:
ao4498eL
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AOS/万代
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Rev 1: November 2009
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4498E combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
and battery protection applications.
D
D
D
Top View
D
DS(ON)
B
Parameter
S
C
T
T
T
T
. This device is ideal for load switch
S
A
A
A
A
=25° C
=70° C
=25° C
=70° C
SOIC-8
S
G
A
A D
A
=25° C unless otherwise noted
Bottom View
t ≤ 10s
Steady-State
Steady-State
Symbol
V
V
I
I
P
T
Symbol
www.aosmd.com
D
DM
J
DS
GS
D
, T
R
R
STG
JA
JL
Product Summary
V
I
R
R
100% UIS Tested
100% Rg Tested
D
ESD Protected
DS
DS(ON)
DS(ON)
(at V
Typ
31
59
16
(at V
(at V
GS
=10V)
GS
GS
Maximum
-55 to 150
=10V)
= 4.5V)
±20
120
3.1
30
18
14
2
G
30V N-Channel MOSFET
Max
40
75
24
D
S
AO4498E
30V
18A
< 5.8m
< 8.5m
Units
Units
° C/W
° C/W
° C/W
° C
W
V
V
A
Page 1 of 5

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ao4498e Summary of contents

Page 1

... General Description The AO4498E combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal for load switch DS(ON) and battery protection applications. SOIC-8 Top View Bottom View Absolute Maximum Ratings T =25° C unless otherwise noted ...

Page 2

... C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO4498E Min Typ Max Units =55° ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 1.8 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =18A D 1.0E+01 40 1.0E+00 1.0E-01 125° C 1.0E-02 1.0E-03 25° C 1.0E- 1.0E-05 0.0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4498E 25° C 125° (Volts =10V GS I =18A =4. =16A 100 125 ...

Page 4

... DC 10 100 1 0.00001 Figure 10: Single Pulse Power Rating Junction- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse P Single Pulse 0.01 0.1 1 Pulse Width (s) www.aosmd.com AO4498E C iss C oss (Volts) DS Figure 8: Capacitance Characteristics T =25° 0.001 0.1 10 1000 Pulse Width (s) to-Ambient (Note F) ...

Page 5

... R es istiv itch ing ircu it & iode R ecovery T est C ircuit & W aveform Isd + www.aosmd.com AO4498E Qg Qgd Charge ff Idt dI/ ...

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