ao4447al Alpha & Omega Semiconductor, ao4447al Datasheet - Page 3

• Manufacturer Part Number: ao4447al
• Description: P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Alpha & Omega Semiconductor

AO4447AL
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10
160
140
120
100
8
6
4
2
80
60
40
20
20
16
12
0
8
4
0
0
0
2
Figure 3: On-Resistance vs. Drain Current and
-
-10V
Figure 1: On-Region Characteristics(Note E)
Figure 5: On-Resistance vs. Gate-Source
5
1
4
Gate Voltage(Note E)
10
Voltage(Note E)
2
-V
-V
-I
DS
GS
D
15
-4V
V
V
(Volts)
(A)
(Volts)
6
GS
GS
V
=-4V
=-4.5V
I
GS
F
3
=-6.5A, dI/dt=100A/µs
=-10V
20
25°C
125°C
V
GS
8
= -2.5V
I
4
D
-3.5V
-3V
25
= -17A
30
10
5
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1.8
1.6
1.4
1.2
1.0
0.8
100
80
60
40
20
0
0
0.0
0
Figure 6: Body-Diode Characteristics(Note E)
V
Figure 2: Transfer Characteristics(Note E)
DS
Figure 4: On-Resistance vs. Junction
25
=-5V
125°C
0.2
1
125°C
Temperature(Note E)
50
Temperature (°C)
0.4
-V
-V
GS
SD
(Volts)
75
2
(Volts)
25°C
0.6
V
I
D
GS
= -17A
100
= -10V
25°C
V
I
D
3
GS
= -15A
0.8
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= -4.5V
125
150
1.0
4