k6f2008t2e Samsung Semiconductor, Inc., k6f2008t2e Datasheet - Page 4

• Manufacturer Part Number: k6f2008t2e
• Description: 256kx8 Bit Super Low Power And Low Voltage Full Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6F2008T2E Family
CAPACITANCE
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
1. Typical value are measured at V
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Industrial Product: T
2. Overshoot: Vcc+2.0V in case of pulse width 20ns.
3. Undershoot: -2.0V in case of pulse width 20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Input capacitance
Input/Output capacitance
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current(CMOS)
Supply voltage
Ground
Input high voltage
Input low voltage
Item
Item
Item
A
=-40 to 85 C, unless otherwise specified.
1)
(f=1MHz, T
CC
=3.0V, T
Symbol
A
I
I
V
I
V
I
=25 C)
CC1
CC2
SB1
I
LO
OH
LI
OL
Symbol
A
=25 C, and not 100% tested.
C
C
IN
IO
V
CS
Cycle time=1 s, 100% duty, I
CS
Cycle time=Min, 100% duty, I
CS
I
I
Other inputs=Vss to Vcc
OL
OH
1) CS
2) 0V CS
IN
=2.1mA
1
2
2
Symbol
=Vss to Vcc
=-1.0mA
=V
=V
V
Vcc
Vss
V
V
1
CC
IH
IH
IH
IL
, V
Vcc-0.2V, CS2 Vcc-0.2V(CS
or CS
-0.2V, V
2
IN
0.2V CS
=V
2
IL
=V
Test Condition
IN
or V
IL
0.2V or V
Test Conditions
or OE=V
V
2
V
-0.2
IH
Min
controlled)
IN
IO
2.7
2.2
0
4
=0V
=0V
3)
1)
IH
IO
IO
IN
=0mA, CS
=0mA, CS
or WE=V
V
CC
-0.2V
1
3.0/3.3
controlled) or
Typ.
IL,
1
1
0
-
-
=V
V
0.2V,
IO
IL
=Vss to Vcc
,
Min
-
-
Vcc+0.2
Max
3.6
0.6
0
Min
2.4
CMOS SRAM
-1
-1
-
-
-
-
Max
10
2)
8
Preliminary
Typ
0.5
-
-
-
-
-
-
1)
Revision 0.0
Max
0.4
35
10
Unit
1
1
3
-
June 2003
Unit
V
V
V
V
pF
pF
Unit
mA
mA
V
V
A
A
A