NBSG11 ON Semiconductor, NBSG11 Datasheet - Page 4

• Manufacturer Part Number: NBSG11
• Manufacturer: ON Semiconductor

5. Maximum Ratings are those values beyond which device damage may occur.
6. JEDEC standard multilayer board - 1S2P (1 signal, 2 power).
7. JEDEC standard multilayer board - 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.
NOTE: SiGe circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
8. Input and output parameters vary 1:1 with V
9. All loading with 50 W to V
10. V
11. V
12. V
*Typicals used for testing purposes.
**The device packaged in FCBGA-16 have maximum temperature specification of 70 C and devices packaged in QFN-16 have maximum
Table 4. MAXIMUM RATINGS
Table 5. DC CHARACTERISTICS, INPUT WITH RSPECL OUTPUT
Symbol
temperature specification of 85 C.
V
V
V
V
I
T
T
q
q
T
I
V
V
V
V
V
R
I
I
Symbol
out
EE
IH
IL
A
stg
JA
JC
sol
CC
EE
I
INPP
OH
OUTPP
IH
IL
IHCMR
TIN
input signal.
IHCMR
IH
IL
always
cannot exceed V
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
min varies 1:1 with V
Negative Power Supply Current
Output HIGH Voltage (Note 9)
Output Amplitude Voltage
Input HIGH Voltage (Single-Ended)
(Note 11)
Input LOW Voltage (Single-Ended)
(Note 12)
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 10)
Internal Input Termination Resistor
Input HIGH Current (@ V
Input LOW Current (@ V
Positive Power Supply
Negative Power Supply
Positive Input
Negative Input
Differential Input Voltage
Output Current
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction-to-Ambient)
(Note 6)
Thermal Resistance (Junction-to-Case)
Wave Solder
V
EE
.
Characteristic
CC
.
CC
Parameter
EE
- 2.0 V. V
, V
(Note 5)
IHCMR
IL
IH
, V
, V
ILMIN
OH
IHMAX
max varies 1:1 with V
/V
)
OL
CC
)
measured at V
. V
|D - D|
EE
V
2.5 V
1450
1435
V
Min
350
mV
1.2
45
CC
45
IH
can vary +0.125 V to -0.965 V.
-
-
http://onsemi.com
V
V
V
V
V
V
Continuous
Surge
16 FCBGA
16 QFN
0 LFPM
500 LFPM
0 LFPM
500 LFPM
1S2P (Note 6)
2S2P (Note 7)
< 15 Seconds
EE
CC
EE
CC
CC
CC
-40 C
V
V
1530
1000
1400
mV*
mV*
Typ
410
Condition 1
CC
= 0 V
= 0 V
IH
= 0 V
= 0 V
60
CC
CC
50
80
25
NBSG11
- V
- V
/V
. The V
-
-
EE
EE
IL
4
.
w 2.8 V
<
150 mV
1575
V
Max
V
525
150
100
IHCMR
2.5
75
55
IH
CC
2.8 V
-
V
range is referenced to the most positive side of the differential
CC
V
1525
1435
2.5 V
V
Min
350
mV
V
V
16 FCBGA
16 FCBGA
16 QFN
16 QFN
16 FCBGA
16 QFN
1.2
= 2.5 V; V
45
CC
45
IH
I
I
-
-
Condition 2
V
V
CC
EE
25 C
V
V
1565
1000
1400
mV*
mV*
Typ
410
60
CC
CC
50
80
25
EE
-
-
= 0 V (Note 8)
1600
V
Max
V
525
150
150
100
mV
2.5
75
55
IH
CC
-
70 C(BGA)/85 C(QFN)**
V
2.5 V
1550
1435
V
Min
350
mV
1.2
45
CC
45
IH
-
-
|V
-65 to +150
-40 to +70
-40 to +85
CC
Rating
-3.6
-3.6
41.6
35.2
108
225
3.6
3.6
2.8
5.0
4.0
V
V
1590
1000
1400
25
50
86
mV*
mV*
Typ
410
- V
60
50
80
25
CC
CC
-
-
EE
|
1625
Max
V
V
525
150
150
100
mV
2.5
75
55
IH
CC
-
Units
mA
mA
C/W
C/W
C/W
C/W
C/W
C/W
V
V
V
V
V
V
Unit
C
C
C
mA
mV
mV
mA
mA
W
V
V
V