w39l020 Winbond Electronics Corp America, w39l020 Datasheet - Page 26

• Manufacturer Part Number: w39l020
• Description: 256k U 8 Cmos Flash Memory
• Manufacturer: Winbond Electronics Corp America

14. VERSION HISTORY
VERSION
A1
A2
A3
A4
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
http://www.winbond.com.tw/
Taipei Office
Neihu Chiu, Taipei, 114,
TEL: [phone]
FAX: [phone]
9F, No.480, Rueiguang Rd.,
Taiwan, R.O.C.
Please note that all data and specifications are subject to change without notice.
All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.
Nov. 11, 2002
May 31, 2002
July 10, 2002
May 2001
DATE
Winbond Electronics Corporation America
2727 North First Street, San Jose,
CA 95134, U.S.A.
TEL: [phone]
FAX: [phone]
Winbond Electronics Corporation Japan
7F Daini-ueno BLDG, 3-7-18
Shinyokohama Kohoku-ku,
Yokohama, 222-0033
TEL: [phone]
FAX: [phone]
10  14
1, 3, 15
PAGE
1, 23
15
23
11
12
1
4
-
Initial Issued
Add cycle of 1K
Change active current from 20 to10 mA (typ.)
Change standby current from 10 to15 PA (typ.)
Correct Power-up Write Inhibit as Power-up Write and
Read Inhibit
Add Low V
Correct old flow chart and add embedded algorithm
Change I
Change I
Change power supply current max from 30 to 20 (mA)
Add HOW TO READ THE TOP MARKING
Correct Block Erase as Sector Erase in the
Embedded Erase Algorithm
Correct Embedded #Data Polling Algorithm
Change Standby Current from 15 to 5 PA (typ.) and from
50 to 25 PA (max.)
- 26 -
DD
SB
DD
2 from 10/20 PA to15/50 PA (typ./max.)
from 20/30 mA to10/20 mA (typ./max.)
inhibit description
DESCRIPTION
27F, 2299 Yan An W. Rd. Shanghai,
TEL: [phone]
FAX: [phone]
Winbond Electronics (H.K.) Ltd.
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd.,
Kowloon, Hong Kong
FAX: [phone]
Winbond Electronics (Shanghai) Ltd.
200336 China
TEL: [phone]
W39L020