k7n163645m Samsung Semiconductor, Inc., k7n163645m Datasheet - Page 10
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k7n163645m
Manufacturer Part Number
k7n163645m
Description
512kx36 & 1mx18-bit Pipelined Ntramtm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K7N163645M.pdf
(20 pages)
K7N163645M
K7N161845M
ABSOLUTE MAXIMUM RATINGS*
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
OPERATING CONDITIONS
*Note : V
CAPACITANCE*
*Note : Sampled not 100% tested.
ASYNCHRONOUS TRUTH TABLE
Voltage on V
Voltage on Any Other Pin Relative to V
Power Dissipation
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
Supply Voltage
Ground
Input Capacitance
Output Capacitance
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DD
OPERATION
Sleep Mode
PARAMETER
Deselected
PARAMETER
and V
Read
Write
DD
DDQ
Supply Relative to V
must be supplied with identical vlotage levels
(T
PARAMETER
A
=25 C, f=1MHz)
ZZ
H
L
L
L
L
SS
(0 C
SYMBOL
SYMBOL
SS
V
C
V
V
OE
C
DDQ
OUT
X
L
H
X
X
DD
SS
IN
T
A
I/O STATUS
Din, High-Z
70 C)
High-Z
High-Z
High-Z
DQ
TEST CONDITION
.
2.375
2.375
MIN
V
512Kx36 & 1Mx18 Pipelined NtRAM
V
0
OUT
- 10 -
IN
=0V
=0V
Notes
1. X means "Don t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
3. Deselected means power Sleep Mode of which stand-by current
SYMBOL
not depend on cycle time.
depends on cycle time.
T
T
T
V
V
P
BIAS
OPR
STG
DD
IN
D
Typ.
2.5
2.5
0
MIN
-
-
-0.3 to 3.6
-0.3 to 3.6
-65 to 150
-10 to 85
RATING
0 to 70
1.6
2.625
2.625
MAX
0
MAX
7
9
January 2000
UNIT
UNIT
UNIT
V
V
V
W
pF
pF
V
V
C
C
C
Rev 1.0
TM