k7r161882b Samsung Semiconductor, Inc., k7r161882b Datasheet - Page 9

• Manufacturer Part Number: k7r161882b
• Description: 512kx36-bit, 1mx18-bit, 2mx9-bit Qdrtm Ii B2 Sram
• Manufacturer: Samsung Semiconductor, Inc.

K7R163682B
K7R160982B
K7R161882B
Notes: 1. Internal burst counter is fixed as 2-bit linear, i.e. when first address is A0+0, next internal burst address is A0+1.
2. "READ" refers to read active status with R=Low, "READ" refers to read inactive status with R=high. "WRITE" and "WRITE" are the same case.
3. Read and write state machine can be active simultaneously.
4. State machine control timing sequence is controlled by K.
READ
ALWAYS
(FIXED)
READ ADDRESS
LOAD NEW
READ NOP
DDR READ
READ
512Kx36 & 1Mx18 & 2Mx9 QDR
STATE DIAGRAM
READ
READ
POWER-UP
- 9 -
WRITE
WRITE
WRITE PORT NOP
WRITE ADDRESS
WRITE
WRITE NOP
DDR WRITE
LOAD NEW
ALWAYS
(FIXED)
Rev. 5.0 July 2006
TM
II b2 SRAM
WRITE