k6r1004v1d Samsung Semiconductor, Inc., k6r1004v1d Datasheet - Page 4

• Manufacturer Part Number: k6r1004v1d
• Description: 64kx16 Bit High-speed Cmos Static Ram 3.3v Operating Operated At Commercial And Industrial Temperature Ranges.
• Manufacturer: Samsung Semiconductor, Inc.

K6R1004V1D
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
RECOMMENDED DC OPERATING CONDITIONS
* V
** V
DC AND OPERATING CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*
* Capacitance is sampled and not 100% tested.
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Input/Output Capacitance
Input Capacitance
IL
IH
(Min) = -2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.
(Max) = V
Parameter
Parameter
CC
CC
Item
+ 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.
Supply Relative to V
Parameter
(T
A
=25°C, f=1.0MHz)
Symbol
Commercial
Industrial
V
I
V
SS
I
I
I
SB1
I
LO
CC
SB
OH
LI
OL
SS
Symbol
V
V
Symbol
V
V
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
Min. Cycle, CS=V
f=0MHz, CS≥V
V
I
I
CC
SS
OL
OH
IH
IL
C
IN
OUT
IN
C
=8mA
I/O
=-4mA
=V
≥V
IN
=V
SS
IH
IL,
CC
SS
or OE=V
V
-0.2V or V
to V
IN
to V
=V
CC
IH
CC
CC
or V
IH
-0.2V,
IH
-0.3*
Min
IN
Test Conditions
3.0
2.0
or WE=V
(T
0
≤0.2V
- 4 -
IL,
V
Symbol
Test Conditions
A
IN
I
V
=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)
V
T
OUT
V
, V
I/O
P
T
T
STG
IN
CC
A
A
d
(T
=0V
=0V
OUT
=0mA
IL
A
=0 to 70°C)
Typ
3.3
0
-
-
Com.
Ind.
-0.5 to 4.6
-0.5 to 4.6
-65 to 150
TYP
-40 to 85
Rating
0 to 70
-
-
1
10ns
10ns
8ns
8ns
V
CC
Max
PRELIMINARY
3.6
0.8
+0.3**
0
CMOS SRAM
Max
8
6
Min
2.4
-2
-2
-
-
-
-
-
-
-
PRELIMINARY
for AT&T
Max
Unit
0.4
80
65
90
75
20
°C
°C
°C
W
2
2
5
V
V
-
Unit
July 2004
V
V
V
V
Unit
Rev. 3.0
pF
pF
Unit
mA
mA
µA
µA
V
V