upa1500b Renesas Electronics Corporation., upa1500b Datasheet - Page 2

• Manufacturer Part Number: upa1500b
• Description: N-channel Power Mos Fet Array Switching Use
• Manufacturer: Renesas Electronics Corporation.

Test Circuit 1
ELECTRICAL CHARACTERISTICS (T
SURGE ABSORBER (Diode, builtin) 1 Unit
2
Test Circuit 3
V
Drain Leakage Current
Gate Leakage Current
Gate Cutoff Voltage
Forward Transfer Admittance
Drain to Source On-State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Repetitive peak Reverse Current
Diode Forward Voltage
GS
PG.
= 20 V
CHARACTERISTIC
PG
0
I
G
R
= 2 mA
V
50
in
DD
= 25
Avalanche Capability
Gate Charge
I
DUT
50
D
I
AS
DUT
BV
DSS
Starting T
R
V
DD
L
SYMBOL
V
I
I
V
| Y
R
R
C
C
C
t
t
t
t
Q
Q
Q
V
I
V
DS
DSS
GSS
d(on)
r
d(off)
f
RRM
GS(off)
DS(on)1
DS(on)2
iss
oss
rss
F(S-D)
F
G
GS
GD
L
V
fs
DD
CH
|
Test Circuit 2
V
0
GS
t = 1 s
Duty Cycle
V
V
V
V
V
V
V
I
R
V
I
V
I
D
F
F
A
DS
GS
DS
GS
GS
GS
DS
GS
R
L
= 3 A, V
= 3.0 A
= 2.0 A, V
PG.
= 15
= 65 V
= 25 ˚C)
= 60 V, V
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 4.0 V, I
= 10 V, V
= 10 V, I
t
TEST CONDITIONS
1 %
GS
R
in
GS
D
D
D
D
= 0
D
GS
GS
= 10
= 1.0 mA
= 2.0 A
= 2.0 A
= 3.0 A, V
DS
R
= 2.0 A
= 10 V, V
Switching Time
= 0
= 0, f = 1.0 MHz
in
= 0
DUT
DD
DD
·
= 30 V,
= 48 V
·
R
V
L
DD
V
Wave Form
I
Wave Form
D
GS
MIN.
1.0
2.0
V
I
D
GS
0
0
10 %
TYP.
t
0.10
0.14
10 %
200
150
100
735
350
d (on)
4.7
1.0
55
20
13
2
t
on
90 %
MAX.
t
0.18
0.24
r
2.0
1.5
10
10
10
I
V
D
GS (on)
t
d (off)
PA1500B
UNIT
t
nC
nC
off
pF
pF
pF
nC
ns
ns
ns
ns
V
S
V
V
90 %
A
A
A
90 %
t
10 %
f