upa1951 Renesas Electronics Corporation., upa1951 Datasheet - Page 4

• Manufacturer Part Number: upa1951
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
- 0.9
- 0.8
- 0.7
- 0.6
- 0.5
- 0.4
- 10
200
150
100
- 8
- 6
- 4
- 2
- 1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
0
0
-50
-50
0
Pulsed
Pulsed
V
V
GS
GS
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
= 1.8 V, I
= 4.5 V, I
T
- 0.2
DS
ch
ch
- Drain to Source Voltage - V
- Channel Temperature - C
- Channel Temperature - °C
0
0
V
V
GS
- 0.4
GS
D
D
1.8 V
= 3.0 V, I
= 1.0 A
= 1.5 A
V
= 4.5 V
GS
50
50
= 2.5 V, I
- 0.6
D
V
I
= 1.5 A
D
DS
100
100
= 1.0 mA
D
- 0.8
2.5 V
= 10 V
= 1.5 A
3.0 V
Data Sheet G15613EJ1V0DS
150
150
- 1
- 0 .0 0 0 01
0.01
- 0 .0 0 0 1
200
150
100
0.1
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
- 0 .0 0 1
50
1
- 0.01
- 0 .0 1
0
- 0 .1
- 1 0
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
- 1
V
Pulsed
DS
FORWARD TRANSFER CHARACTERISTICS
0
V
= 10 V
GS
V
P u ls e d
D S
- Gate to Source Voltage - V
- 2
V
I
D
- 0.1
=
GS
- Drain Current - A
- 0 .5
- Gate to Source Voltage - V
1 0 V
I
D
= 1.5 A
- 4
T
- 1
A
- 1
= 25°C
125°C
25°C
75°C
- 6
T
A
Pulsed
- 1 .5
= 1 2 5 °C
PA1951
7 5 °C
2 5 °C
2 5 °C
- 10
- 8
- 2