upa1902 Renesas Electronics Corporation., upa1902 Datasheet - Page 4

• Manufacturer Part Number: upa1902
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
2.4
1.9
1.4
30
25
20
15
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
40
20
5
0
0
0.01
-50
0
Pulsed
V
I
V
Pulsed
D
DS
GS
T
= 1.0 mA
A
= 10 V
= 10 V
V
= 125°C
0.1
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
DS
− 25°C
ch
75°C
25°C
- Drain to Source Voltage - V
0.1
- Channel Temperature - ° C
0
I
D
0.2
- Drain Current - A
0.3
50
1
0.4
4.5 V
100
10
V
GS
0.5
= 10 V
Data Sheet G16634EJ1V0DS
150
0.6
100
0.0001
0.001
0.01
100
100
0.1
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
40
20
10
10
0
1
1
0.01
0.01
FORWARD TRANSFER CHARACTERISTICS
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
T
V
Pulsed
V
Pulsed
A
GS
DS
DS
= 125°C
= 4.5 V
= 10 V
= 10 V
− 25°C
75°C
25°C
V
T
GS
A
0.1
0.1
I
I
= 125°C
1
D
D
- Gate to Source Voltage - V
− 25°C
- Drain Current - A
- Drain Current - A
75°C
25°C
T
A
= − 25°C
125°C
1
25°C
75°C
2
1
10
10
3
µ
PA1902
100
100
4