upa1916 Renesas Electronics Corporation., upa1916 Datasheet - Page 5

• Manufacturer Part Number: upa1916
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

10000
1000
0.01
100
100
0.1
10
10
0.1
1
0.4
V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SD
V
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0.6
100
DS
- Source to Drain Voltage - V
10
0.001
1
- Drain to Source Voltage - V
1.0
Single Pulse
0.8
0.01
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
C
1.0
C
C
oss
iss
rss
f = 1 MHz
V
GS
= 0 V
0.1
Without board
Data Sheet G15635EJ1V0DS
1.2
100
PW - Pulse Width - s
1
Mounted on 250mm
connected to drain electrode in
50mm 50mm 1.6mm FR-4 board
1000
100
10
1
5
4
3
2
1
0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0.1
0
t
t
I
10
t
d(off)
t
d(on)
D
f
r
= 4.5 A
SWITCHING CHARACTERISTICS
2
2
35 m copper pad
V
Q
DD
I
D
G
= 10 V
- Drain Current - A
100
- Gate Charge - nC
6.0 V
4
1
6
1000
V
V
R
DD
GS
G
= 10
= 6.0 V
= 4.0 V
8
10
10
PA1916
5