upa1914te Renesas Electronics Corporation., upa1914te Datasheet - Page 3

• Manufacturer Part Number: upa1914te
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
2.0
1.5
1.0
100
20
16
12
80
60
40
20
8
4
0
50
0.0
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
I
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
D
DS
=
T
= 10 V
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.2
ch
30
T
DS
1 mA
A
0
- Channel Temperature - ˚C
- Drain to Source Voltage - V
- Ambient Temperature - ˚C
60
0.4
V
GS
50
= 20 V
90
A
0.6
= 25°C)
V
V
100
GS
120
GS
V
= 4.0 V
= 4.5 V
GS
0.8
= 10 V
Data Sheet D13810EJ2V0DS
150
150
1.0
!
0.00001
0.0001
0.001
0.01
0.01
100
0.01
100
100
0.1
0.1
0.1
10
10
10
1
1
1
0.1
0.5
0.01
Single Pulse
Mounted on 250mm
Connected to Drain Electrode in
50mm x 50mm x 1.6mm FR-4 Board
V
V
FORWARD BIAS SAFE OPERATING AREA
DS =
DRAIN CURRENT
DS
FORWARD TRANSFER ADMITTANCE Vs.
= 10V
1.0
V
TRANSFER CHARACTERISTICS
V
10 V
DS
GS
T
- Drain to Source Voltage - V
A
0.1
- Gate to Sorce Voltage - V
1.5
= 25 ˚C
I
2
D
1
x 35 m Copper Pad
T
- Drain Current - A
A
= 25 ˚C
2.0
T
A
= 125 ˚C
1
T
2.5
A
= 75 ˚C
10
3.0
10
PA1914
3.5
100
.0
100
3