upa1911 Renesas Electronics Corporation., upa1911 Datasheet - Page 4

• Manufacturer Part Number: upa1911
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
200
150
100
200
150
100
350
300
250
200
150
100
50
50
50
0
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
0
0
0.01
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE Vs.
V
V
GS
GS
=
= 2.5 V
V
GS
2
.5 V
0.1
- Gate to Source Voltage - V
I
D
- Drain Current - A
I
T
D
0.1
A
- Drain Current - A
= 125 ˚C
T
4
A
75 ˚C
25 ˚C
25 ˚C
= 125 ˚C
1
25 ˚C
25 ˚C
75 ˚C
6
1
10
I
D
= 1.5 A
8
Data Sheet D13455EJ2V0DS
100
10
10
1000
250
200
150
100
100
200
150
100
50
50
10
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
0.01
50
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
I
V
D
GS
= 1.5 A
= 4.0 V
V
T
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DS
T
ch
0.1
A
I
0
- Drain to Source Voltage - V
D
= 125 ˚C
- Channel Temperature -˚C
- Drain Current - A
25 ˚C
75 ˚C
25 ˚C
50
10
1
V
C
C
C
GS
4.0 V
iss
oss
rss
= 2.5 V
100
10
V
f = 1 MHz
GS
4.5 V
= 0 V
PA1911
100
100
150