upa1830 Renesas Electronics Corporation., upa1830 Datasheet - Page 4

• Manufacturer Part Number: upa1830
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
- 2.4
- 2.2
- 1.8
- 1.6
- 1.4
- 40
- 30
- 20
- 10
- 2
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
30
20
10
0
0
-50
-50
0
Pulsed
I
Pulsed
D
= 4.5 A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
T
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
DS
ch
- 0.2
ch
- Channel Temperature - C
- Drain to Source Voltage - V
- Channel Temperature - °C
0
0
V
GS
V
= 10 V
GS
- 0.4
4.5 V
= 4.0 V
50
50
- 0.6
V
I
D
DS
4.0 V
= 1.0 mA
100
100
10 V
= 10 V
- 0.8
4.5 V
Data Sheet G16268EJ1V0DS
150
150
- 1
- 0.0001
- 0.001
- 0.01
- 100
- 0.1
- 10
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.1
- 1
10
40
30
20
10
1
- 0.01
0
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
- 1
0
V
Pulsed
V
Pulsed
DS
DS
= 10 V
= 10 V
V
- 1.5
V
GS
GS
- 0.1
- Gate to Source Voltage - V
I
- 5
- Gate to Source Voltage - V
D
- Drain Current - A
- 2
I
D
= 4.5 A
- 2.5
- 10
- 1
- 3
- 10
- 15
T
T
A
A
= 25°C
PA1830
= 125°C
- 3.5
125°C
75°C
25°C
25°C
25°C
75°C
Pulsed
- 100
- 20
- 4