upa1872bgr-9jg Renesas Electronics Corporation., upa1872bgr-9jg Datasheet - Page 4

• Manufacturer Part Number: upa1872bgr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.5
0.5
40
30
20
10
40
30
20
10
0
0
1
0.1
-50
0
Pulsed
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
A
T
= 125°C
V
ch
DS
−25°C
0.1
- Channel Temperature - °C
75°C
25°C
- Drain to Source Voltage - V
I
D
0
- Drain Current - A
2.5 V
1
0.2
V
GS
50
= 4.5 V
0.3
10
V
I
V
Pulsed
D
100
DS
= 1.0 mA
GS
0.4
= 10.0 V
= 4.5 V
3.1 V
4.0 V
Data Sheet G16742EJ1V0DS
100
150
0.5
0.001
0.01
100
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.1
0.1
40
30
20
10
10
10
0
1
1
FORWARD TRANSFER CHARACTERISTICS
0.01
0.1
0.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T
V
Pulsed
V
Pulsed
A
DS
DS
= 125°C
= 10.0 V
V
= 10.0 V
−25°C
GS
75°C
25°C
- Gate to Source Voltage - V
1
I
D
I
D
0.1
- Drain Current - A
1
- Drain Current - A
1.5
10
1
T
T
A
V
Pulsed
µ
A
= −25°C
2
GS
= 125°C
125°C
25°C
75°C
PA1872B
= 4.0 V
−25°C
75°C
25°C
100
2.5
10