upa1851gr-9jg Renesas Electronics Corporation., upa1851gr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1851gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
100
80
60
40
2.0
1.5
20
1.0
0.5
12
10
8
6
4
2
0
0
50
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
I
D
DS
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 1 mA
= 10 V
V
30
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
T
T
0.2
DS
ch
A
- Drain to Source Voltage - V
0
- Ambient Temperature - ˚C
- Channel Temperature - ˚C
60
0.4
50
90
0.6
V
A
GS
100
= 25°C)
120
= 10 V
0.8
4.5 V
4.0 V
Data Sheet D12733EJ2V0DS00
150
150
1.0
0.00001
0.0001
0.001
100
0.1
0.01
0.01
100
100
10
0.1
0.1
10
10
1
0.1
1
1
0.1
0
V
Single Pulse
Mounted on Ceramic
Substrate of 50 cm x 1.1 mm
P
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DS
D
FORWARD BIAS SAFE OPERATING AREA
V
(FET1) : P
T
DS
A
= 10 V
= 25 ˚C
= 10 V
TRANSFER CHARACTERISTICS
V
V
1
DS
GS
25 ˚C
D
- Drain to Source Voltage - V
- Gate to Source Voltage - V
(FET2) = 1:1
I
D
2
1
- Drain Current - A
2
1
125 ˚C
3
75 ˚C
10
4
10
5
PA1851
100
6
100
3