upa1858 Renesas Electronics Corporation., upa1858 Datasheet - Page 3

• Manufacturer Part Number: upa1858
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
120
100
- 0.01
- 100
80
60
40
20
- 0.1
- 10
0
- 1
0
FORWARD BIAS SAFE OPERATING AREA
- 0.1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
R
(V
S ingle pulse
Mounted on ceram ic substrate
of 5000 m m
P
25
D
DS(on )
G S
V
(FE T1):P
T
DS
= 4.5 V)
A
- Ambient Temperature - C
I
- Drain to Source Voltage - V
lim ited
D (D C)
50
1000
100
0.1
10
2
D
D C
- 1
1
x 1.1 m m
1 m
(FE T2) = 1:1
75
I
D (pulse)
Single pulse
P
D
(FET1):P
100
10 m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
- 10
125
A
D
= 25°C)
PW = 1 m s
(FET2) = 1:1
150
10 m s
100 m s
100 m
Data Sheet G16276EJ1V0DS
175
- 100
PW - Pulse Width - s
125 C/W
Mounted on FR-4 board of
2500 mm
1
Mounted on ceramic substrate of
5000 mm
62.5 C/W
2
x 1.6 mm
2.5
1.5
0.5
2
1
0
2
10
x 1.1 mm
0
P
D
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
(FET1):P
T
A
100
- Ambient Temperature - C
50
Mounted on ceramic substrate
of 5000 mm
D
(FET2)=1:1
75
Mounted on FR-4 board
of 2500 mm
1000
2
100
x 1.1 mm
125
2
x 1.6 mm
150
PA1858
175
3