upa1855 Renesas Electronics Corporation., upa1855 Datasheet - Page 3

• Manufacturer Part Number: upa1855
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
100
1.5
80
60
40
1.0
0.5
20
25
10
20
15
5
0
0
50
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
I
D
DS
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 1 mA
V
= 10 V
GS
T
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
= 4.5 V
0.2
ch
T
DS
A
0
- Drain to Source Voltage - V
- Channel Temperature - ˚C
- Ambient Temperature - ˚C
60
0.4
V
50
GS
V
GS
= 4.0 V
90
0.6
= 2.5 V
A
= 25°C)
100
120
0.8
Data Sheet D13454EJ2V0DS
150
150
1.0
0.00001
0.0001
0.001
0.01
0.01
0.01
100
100
100
0.1
0.1
10
10
0.1
10
1
1
0.01
1
0.0
0.1
V
V
T
DS
DS
Single Pulse
Mounted on Ceramic
Board of 50cm x 1.1mm
P
FORWARD BIAS SAFE OPERATING AREA
A
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
D
(FET1) : P
= 25 ˚C
= 10 V
= 10 V
T
TRANSFER CHARACTERISTICS
V
A
V
0.5
DS
= -25 ˚C
GS
T
0.1
- Drain to Source Voltage - V
A
- Gate to Sorce Voltage - V
D
= 125 ˚C
(FET2) = 1:1
2
I
D
1
T
- Drain Current - A
A
1.0
= 75 ˚C
1
1.5
10
10
2.0
PA1855
100
100
2.5
3