upa1803 Renesas Electronics Corporation., upa1803 Datasheet - Page 2

• Manufacturer Part Number: upa1803
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

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ELECTRICAL CHARACTERISTICS (T
TEST CIRCUIT 1 SWITCHING TIME
2
V
0
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
Duty Cycle
τ = 1 μ s
PG.
τ
CHARACTERISTICS
≤
1 %
R
G
= 10 Ω
R
D.U.T.
G
R
V
L
DD
V
Wave Form
I
Wave Form
D
I
I
V
| y
R
R
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
SYMBOL
GS
DSS
GSS
d(on)
r
d(off)
f
rr
GS(off)
F(S-D)
DS(on)1
DS(on)2
iss
oss
rss
G
GS
GD
rr
fs
A
|
= 25°C)
V
I
D
GS
Data Sheet G13803EJ3V0DS
0
0
10 %
10 %
t
d (on)
V
V
V
V
V
V
V
V
f = 1 MHz
V
I
V
R
V
I
V
I
I
di/dt = 100 A /
D
D
F
F
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
DD
GS
G
= 8.0 A, V
= 8.0 A, V
= 4.0 A,
= 8.0 A,
= 10 Ω
t
on
= 30 V, V
= ±20 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V,
= 0 V,
= 15 V,
= 10 V,
= 24 V,
= 10 V
90 %
t
r
V
I
D
TEST CONDITIONS
GS
t
d (off)
GS
GS
D
D
D
D
GS
μ
= 1 mA
= 4.0 A
= 4.0 A
DS
= 4.0 A
= 0 V
= 0 V,
t
s
off
= 0 V
90 %
90 %
= 0 V
t
10 %
f
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
1.5
I
3
G
50 Ω
= 2 mA
D.U.T.
TYP.
1880
0.78
571
214
1.9
8.6
5.1
8.7
14
11
27
77
72
47
36
37
35
MAX.
±10
2.5
10
12
16
μ
UNIT
PA1803
R
mΩ
mΩ
V
μ
μ
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
A
A
L
DD