upa1800gr-9jg Renesas Electronics Corporation., upa1800gr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1800gr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
100
40
2.0
1.5
80
60
20
1.0
0.5
15
10
20
5
0
0
50
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
I
Pulsed
D
V
DS
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 1 mA
GS
= 10 V
= 4.5 V
V
30
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
T
0.2
T
DS
ch
A
- Drain to Source Voltage - V
0
- Channel Temperature - ˚C
- Ambient Temperature - ˚C
60
0.4
V
GS
50
= 2.5 V
90
V
0.6
GS
= 4.0 V
A
100
= 25 C)
120
0.8
Data Sheet D11407EJ1V0DS00
150
150
1.0
0.0001
0.001
0.01
0.01
100
100
0.1
10
0.01
0.1
10
0.001
100
1
0.1
1
10
1
0.1
0
V
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
T
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1 mm
FORWARD BIAS SAFE OPERATING AREA
V
DS
A
= 25˚C
DS
= 10 V
0.5
= 10 V
TRANSFER CHARACTERISTICS
0.01
V
V
GS
DS
- Gate to Source Voltage - V
- Drain to Source Voltage - V
I
D
2
I
- Drain Current - A
1
D(DC)
1
T
0.1
I
D
A
25 ˚C
(pulse)
= 25 ˚C
125 ˚C
1.5
75 ˚C
1
2
10
10
2.5
100
100
3
PA1800
3