upa1804 Renesas Electronics Corporation., upa1804 Datasheet - Page 3
upa1804
Manufacturer Part Number
upa1804
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1804.pdf
(8 pages)
TYPICAL CHARACTERISTICS (T
100
2.0
2.5
1.5
80
60
40
20
30
25
20
15
10
0
5
0
50
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
30
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.2
T
ch
V
A
0
- Channel Temperature - ˚C
DS
- Ambient Temperature - ˚C
- Drain to Source Voltage - V
60
0.4
50
90
4.5 V
V
0.6
GS
A
= 10 V
100
= 25°C)
120
V
I
D
0.8
DS
= 1 mA
= 10 V
Data Sheet D13868EJ2V0DS
150
150
1.0
0.00001
0.0001
0.001
0.01
100
0.01
0.01
0.1
100
10
100
0.1
0.1
10
1
10
1
1
0.1
V
V
DRAIN CURRENT
T
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
DS
FORWARD TRANSFER ADMITTANCE Vs.
FORWARD BIAS SAFE OPERATING AREA
A
DS
= 25˚C
= 10 V
1.0
= 10 V
TRANSFER CHARACTERISTICS
V
2
DS
125˚C
0.1
25˚C
75˚C
V
I
GS
D(DC)
- Drain to Source Voltage - V
- Gate to Sorce Voltage - V
I
1
D(pulse)
2.0
I
D
- Drain Current - A
T
1
A
= 25 ˚C
125˚C
25˚C
75˚C
3.0
10
10
4.0
PA1804
100
100
3