upa1810 Renesas Electronics Corporation., upa1810 Datasheet - Page 3

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upa1810

Manufacturer Part Number
upa1810
Description
P-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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TYPICAL CHARACTERISTICS (T
0.001
100
0.01
100
0.1
0.1
10
10
1
1
100
0.1
80
60
40
20
0
0
V
V
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DS
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
DS =
T
= 10V
A
TRANSFER CHARACTERISTICS
0.5
= 25 ˚C
V
GS
10 V
30
T
25 ˚C
A
- Gate to Sorce Voltage - V
- Ambient Temperature - ˚C
I
1.0
D
1
- Drain Current - A
60
125 ˚C
75 ˚C
1.5
90
2.0
10
A
= 25 C)
120
2.5
Data Sheet D11819EJ1V0DS00
150
3.0
100
100
80
20
0.9
0.8
0.7
0.5
40
1.0
0.6
60
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
0.01
50
100
0.1
10
V
1
0.1
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
GS
V
I
T
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
D
FORWARD BIAS SAFE OPERATING AREA
A
DS
= 25 ˚C
= 1 mA
= 2.5 V
= 10 V
T
ch
V
T
DS
0.1
A
I
0
D
- Channel Temperature - ˚C
=
- Drain to Source Voltage - V
- Drain Current - A
I
125˚C
D
2
75˚C
25˚C
(DC)
25˚C
1
I
D
(pulse)
1
50
10
100
10
100
100
150
PA1810
3

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