upa1812gr-9jg Renesas Electronics Corporation., upa1812gr-9jg Datasheet - Page 4

• Manufacturer Part Number: upa1812gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
100
60
80
40
20
100
20
10
50
40
30
0
40
20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
60
0.1
0.1
V
V
GS
GS
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
= 10 V
= 4.0 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
V
T
5
GS
A
75˚C
25˚C
25˚C
= 125˚C
- Gate to Source Voltage - V
I
D
I
T
D
- Drain Current - A
A
1
- Drain Current - A
1
= 125˚C
25˚C
75˚C
25˚C
10
15
10
10
I
D
= 2.5 A
20
Data Sheet D12967EJ2V0DS
25
100
100
10000
1000
100
10
20
80
60
40
60
40
20
80
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
50
0.1
V
f = 1 MHz
I
D
V
GS
GS
= 2.5 A
= 0 V
= 4.5 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
T
Tch - Channel Temperature - ˚C
V
A
DS
25˚C
75˚C
25˚C
0
= 125˚C
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
10
50
C
C
C
oss
rss
V
iss
GS
= 4.0 V
10
4.5 V
100
10 V
PA1812
100
150
100