upa1815gr-9jg Renesas Electronics Corporation., upa1815gr-9jg Datasheet - Page 5

• Manufacturer Part Number: upa1815gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

0.01
10000
100
0.1
1000
10
100
1
0.4
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1
V
F(S-D)
V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DS
0.6
1000
0.1
100
0.001
10
- Drain to Source Voltage - V
1
- Source to Drain Voltage - V
Mounted on ceramic
substrate of 50 cm
Single Pulse
0.8
10
0.01
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
C
2
C
C
1.0
x 1.1 mm
iss
oss
rss
V
f = 1 MHz
GS
= 0 V
Data Sheet D13805EJ3V0DS
0.1
1.2
100
PW - Pulse Width - s
1
1000
10
100
0
8
6
4
2
10
0
1
0.1
I
V
V
R
D
DD
GS
G
10
DYNAMIC INPUT CHARACTERISTICS
= 7 A
(
= 10
= 10 V
on
5
SWITCHING CHARACTERISTICS
) = 4.0 V
Q
I
g
D
10
- Gate Charge - nC
- Drain Current - A
100
62.5 ˚C/W
V
DD
15
= 16 V
1
td
td
(off)
(on)
10 V
20
1000
25
tr
tf
PA1815
30
10
5