upa1730tp Renesas Electronics Corporation., upa1730tp Datasheet - Page 2

• Manufacturer Part Number: upa1730tp
• Description: Switching P-channel Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
PG.
= –20
CHARACTERISTICS
I
G
0 V
PG
V
= 2 mA
50
DD
I
D
R
D.U.T.
G
= 25
50
I
AS
D.U.T.
BV
DSS
Starting T
V
R
V
DS
L
DD
L
V
ch
DD
SYMBOL
R
R
R
V
V
| y
t
t
Q
I
I
DS(on)1
DS(on)2
DS(on)3
C
C
Q
GS(off)
C
Q
A
GSS
d(on)
d(off)
F(S-D)
Q
DSS
t
t
t
oss
GS
GD
rr
fs
iss
rss
r
f
G
rr
= 25 °C, Unless otherw ise noted, All terminals are connected.)
|
Data Sheet G15935EJ1V0DS
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/ s
V
D
F
F
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
DD
GS
G
GS
= 13 A, V
= 13 A, V
0
= –13.0 A
= 10
Duty Cycle
= –30 V, V
=
=
=
=
=
PG.
=
=
=
=
= 0 V
=
=
( )
= 1 s
TEST CIRCUIT 2 SWITCHING TIME
–
–
–

–
–
–
–
–
–
–
20 V, V
10 V, I
10 V, I
10 V
15 V, I
24 V
10 V, I
4.5 V, I
4.0 V, I
10 V
10 V
TEST CONDITIONS
GS
GS
D
D
D
D
= 0 V
= 0 V
GS
D
D
R
DS
=
=
=
=
1%
G
=
=
= 0 V
= 0 V
–
–
–
–
–
–
D.U.T.
1 mA
6.5 A
6.5 A
6.5 A
6.5 A
6.5 A
R
V
L
DD
V
Wave Form
V
Wave Form
GS
DS
MIN.
–
11.0
1.0
V
V
V
DS
GS
0
DS
0
t
10%
( )
( )
d(on)
90%
TYP.
3800
1200
–
23.0
10.3
11.3
0.80
500
130
7.6
15
20
50
70
17
53
57
1.6
9
t
on
10%
t
r
MAX.
V
–
13.5
15.0

PA1730TP
9.5
–
GS
t
2.5
10
d(off)
1
10%
t
off
UNIT
90%
m
m
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
t
V
S
V
90%
f
A
A