upa1716g Renesas Electronics Corporation., upa1716g Datasheet

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upa1716g

Manufacturer Part Number
upa1716g
Description
Switching P-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1716G.pdf (8 pages)

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
applications of notebook computers.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Notes 1. PW
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management
Low on-resistance
R
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
iss
G13727EJ1V0DS00 (1st edition)
March 1999 NS CP(K)
PA1716G
= 12.5 m
= 17.0 m
= 19.0 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
= 2100 pF TYP.
10 s, Duty Cycle
TYP. (V
TYP. (V
TYP. (V
Note1
DS
A
GS
= 25°C)
GS
GS
GS
= 0 V)
= 0 V)
= –10 V, I
= –4.5 V, I
= –4.0 V, I
P-CHANNEL POWER MOS FET
Power SOP8
PACKAGE
Note2
1 %
A
D
D
D
= 25°C, All terminals are connected.)
= –4 A)
= –4 A)
= –4 A)
INDUSTRIAL USE
I
D(pulse)
I
V
V
D(DC)
T
T
P
DSS
GSS
DATA SHEET
stg
ch
T
SWITCHING
2
x 1.0 mm
–55 to +150
MOS FIELD EFFECT TRANSISTOR
#
#
–30
150
#
2.0
32
20
8
PACKAGE DRAWING (Unit : mm)
8
1
5.37 Max.
0.40
1.27
W
°C
°C
V
V
A
A
+0.10
–0.05
0.78 Max.
5
4
0.12 M
EQUIVARENT CIRCUIT
1,2,3
4
5,6,7,8
Gate
Gate
Protection
Diode
0.5 ±0.2
©
6.0 ±0.3
; Source
; Gate
; Drain
PA1716
4.4
Source
Drain
0.8
0.10
1998, 1999
Body
Diode

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upa1716g Summary of contents

Page 1

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES Low on-resistance R = 12.5 m TYP – DS(on 17.0 m TYP. ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 25˚C A 25˚C 75˚C 125˚C 150˚C 1 0.1 1.0 2 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = 50˚C A 25˚C 25˚C ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 100 150 T - Channel Temperature - ˚C ...

Page 6

Data Sheet G13727EJ1V0DS00 PA1716 ...

Page 7

Data Sheet G13727EJ1V0DS00 PA1716 7 ...

Page 8

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means ...

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