upa1740 Renesas Electronics Corporation., upa1740 Datasheet
upa1740
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upa1740 Summary of contents
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DESCRIPTION The PA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES High voltage 200 V DSS Gate voltage rating: 30 ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 125 T - Case Temperature - C C FORWARD BIAS SAFE OPERATING AREA 100 I = 7.0 ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 5.0 ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1 Pulsed 1 7.0 A 0.8 D 0.6 3.5 A 0.4 0.2 0 -50 - 100 125 T - Channel ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 100 Starting T = 25°C ch 0.1 0.01 0.1 1 ...
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Data Sheet G15937EJ1V0DS PA1740TP 7 ...
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The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...