upa1720g Renesas Electronics Corporation., upa1720g Datasheet - Page 2

• Manufacturer Part Number: upa1720g
• Description: Switching N-channel Power Mos Fet Industrial Use
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
2
Drain to Source On-state Resistance
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
PG.
= 20
CHARACTERISTICS
PG.
0 V
I
G
V
= 2 mA
50
R
DD
G
D.U.T.
= 25
I
D
50
I
AS
D.U.T.
BV
DSS
Starting T
R
V
DD
L
V
DS
L
V
DD
SYMBOL
ch
R
R
R
V
V
| y
t
t
Q
DS(on)1
DS(on)2
DS(on)3
I
I
C
C
Q
C
GS(off)
Q
d(on)
d(off)
F(S-D)
Q
A
DSS
GSS
t
t
t
oss
rss
GS
GD
rr
fs
iss
r
f
G
rr
= 25 °C, All terminals are connected.)
|
Data Sheet G13888EJ3V0DS
V
V
V
V
V
V
V
V
V
f = 1 MHz
I
V
V
R
I
V
V
I
I
di/dt = 100 A/ s
V
0
D
D
F
F
GS
GS
GS
DS
DS
DS
GS
DS
GS
GS(on)
DD
DD
GS
G
GS
= 4.0 A
= 8 A
= 8 A, V
= 8 A, V
Duty Cycle
= 10
= 1 s
= 10 V, I
= 4.5 V, I
= 4.0 V, I
= 10 V, I
= 10 V, I
= 30 V, V
= ±16 V, V
= 10 V
= 0 V
= 15 V
= 24 V
= 10 V
TEST CIRCUIT 2 SWITCHING TIME
PG.
= 10 V
TEST CONDITIONS
GS
GS
D
D
D
= 0 V
= 0 V
D
D
GS
= 4.0 A
= 1 mA
= 4.0 A
1 %
DS
= 4.0 A
= 4.0 A
= 0 V
R
= 0 V
G
D.U.T.
R
V
DD
L
V
Wave Form
I
Wave Form
D
GS
MIN.
1.5
3.0
V
I
D
GS
0
0
10 %
TYP.
t
20.0
25.5
29.0
0.86
10 %
800
250
d(on)
2.0
7.0
2.3
3.6
96
20
80
40
40
14
30
40
t
on
90 %
MAX.
t
r
25.0
33.0
38.0
±10
2.5
10
V
I
D
PA1720
t
GS(on)
d(off)
UNIT
t
m
m
m
off
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
90 %
V
S
V
A
A
90 %
t
10 %
f