upa1709g Renesas Electronics Corporation., upa1709g Datasheet - Page 4

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upa1709g

Manufacturer Part Number
upa1709g
Description
Switching N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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4
100
0.1
10
0.1
10
40
30
20
1
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T
A
= -50 ˚C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1 000
0.001
-25 ˚C
0.01
25 ˚C
100
0.1
10
1
1
I
I
D
10
D
V
- Drain Current - A
- Drain Current - A
GS
1
= 4.5 V
10 V
125 ˚C
150 ˚C
100
75 ˚C
10
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
1 m
V
DS
Pulsed
Pulsed
= 0 V
100
Data Sheet G13436EJ2V0DS
PW - Pulse Width - s
100
10 m
100 m
1.8
1.0
2.6
60
40
20
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Mounted on ceramic
substrate of 1200 mm
Single Pulse
-40
V
GS
T
ch
- Gate to Source Voltage - V
10
- Channel Temperature - ˚C
R
th(CH-A)
0
5
= 62.5 ˚C/W
100
2
40
0.7 mm
I
D
= 4.5 A
1 000
10
80
V
I
D
DS
= 1 mA
= 10 V
120
Pulsed
PA1709
15

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