upa1705g Renesas Electronics Corporation., upa1705g Datasheet
upa1705g
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N-CHANNEL POWER MOS FET DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES Super low on-state resistance R = 19.0 m TYP DS(on)1 ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...
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TYPICAL CHARACTERISTICS ( ° terminals are connected.) A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C ...
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FORWARD TRANSFER CHARACTERISTICS 100 125 ˚ ˚C 25 ˚C –25 ˚ Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 – 100 120 140 160 T ...
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Data Sheet G12712EJ1V0DS00 PA1705 ...
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Data Sheet G12712EJ1V0DS00 PA1705 7 ...
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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means ...