upa1700 Renesas Electronics Corporation., upa1700 Datasheet
upa1700
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upa1700 Summary of contents
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DESCRIPTION This product is N-Channel MOS Field Effect Tran- sistor designed for DC/DC converter and power man- agement applications of note book computers. FEATURES • Low On-Resistance Typ. (V DS(on Typ. (V ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Drain to Source On-state R DS(on)1 Resistance R DS(on)2 Gate to Source Cutoff Voltage V GS(off) Forward Transfer Admittance | Drain Leakage Current I DSS Gate to Source Leakage I GSS Current ...
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TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T – Ambient Temperature – °C A FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ...
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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 100 10 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V Pulsed T = –25 ° °C 75 °C 10 125 °C 1 0.1 0.1 ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE –50 0 100 150 50 T – Channel Temperature – °C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE ...
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REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application ...
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PA1700 7 ...
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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. ...