hat2265h Renesas Electronics Corporation., hat2265h Datasheet - Page 3

• Manufacturer Part Number: hat2265h
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2265H
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Rev.0.00, Sept.2004, page 3 of 5
Symbol Min
V
V
I
I
V
R
R
|y
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
DS(on)
fs
|
30
± 20
—
—
1.6
—
—
60
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
2.5
3.4
100
5180
1200
380
0.5
33
15
7.1
13
65
60
9.5
0.81
40
± 10
1
2.5
3.3
5.3
—
—
—
—
—
1.06
—
Max
—
—
—
—
—
—
—
—
—
Unit
V
V
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
A
A
I
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
V
V
R
Rg = 4.7
IF = 55 A, V
IF = 55 A, V
diF/ dt = 100 A/ µs
Test Conditions
I
D
G
D
D
D
D
GS
DS
DS
DS
GS
DD
GS
GS
DD
L
= 10 mA, V
= 27.5 A, V
= 27.5 A, V
= 27.5 A, V
= 55 A
= ±100 A, V
= 0.36
= 30 V, V
= 10 V, I
= 10 V
= 10 V
= ±16 V, V
= 0
= 4.5 V
= 10 V, I
10 V
GS
GS
D
GS
GS
GS
GS
DS
D
= 27.5 A
= 0
= 0
DS
DS
= 1 mA
= 10 V
= 0
= 0
= 10 V
= 4.5 V
= 0
= 0
Note4
Note4
Note4
Note4