hat2201wp-el-e Renesas Electronics Corporation., hat2201wp-el-e Datasheet - Page 3

• Manufacturer Part Number: hat2201wp-el-e
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2201WP
Main Characteristics
REJ03G1679-0300 Rev.3.00 May 27, 2008
Page 3 of 7
500
400
300
200
100
40
30
20
10
20
16
12
8
4
0
0
Drain to Source Saturation Voltage vs.
0
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature Tc (°C)
7 V
Gate to Source Voltage
2
4
10 V
50
4
8
100
12
6
6.2 V
Pulse Test
150
Pulse Test
16
I
GS
8
DS
D
5.8 V
= 5 A
2 A
1 A
(V)
(V)
200
20
10
0.001
0.01
100
100
Static Drain to Source on State Resistance
0.1
50
20
10
10
20
16
12
1
8
4
0
0.1 0.3
1
Drain to Source Voltage V
Operation in
this area is
limited by R
Ta = 25°C
1 shot Pulse
V
Pulse Test
Gate to Source Voltage V
V
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
GS
= 10 V
= 8 V
DC Operation
Tc = 25°C
10 V
2
Tc = 75°C
Drain Current I
1
vs. Drain Current
DS(on)
3
4
10
10 30
6
25°C
–25°C
D
100
(A)
10 s
DS
8
GS
300 1000
(V)
(V)
100
10