hat2202c09 Renesas Electronics Corporation., hat2202c09 Datasheet
hat2202c09
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hat2202c09 Summary of contents
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HAT2202C Silicon N Channel MOS FET Power Switching Features Low on-resistance typ. ( 4.5 V) DS(on) GS Low drive current. High density mounting 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package ...
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HAT2202C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance ...
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HAT2202C Main Characteristics Power vs. Temperature Derating 1.6 Test Condition : When using the glass epoxy board (FR4 1.6 mm) 1.2 0.8 0 100 Ambient Temperature Typical Output Characteristics 20 4 2.5 ...
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HAT2202C Static Drain to Source on State Resistance vs. Temperature 2 4 – Case Temperature Dynamic Input Characteristics ...
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HAT2202C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Ω Vin 10 V Rev.5.00 Jan 26, 2006 page Vout Monitor Vin R L Vout d(on) Waveform 90% 10% 10% 10% 90% ...
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HAT2202C Package Dimensions Package Name JEITA Package Code CMFPAK A-A Section Ordering Information Part Name HAT2202C-EL-E ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...