hat2049t Renesas Electronics Corporation., hat2049t Datasheet - Page 3

• Manufacturer Part Number: hat2049t
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

Main Characteristics
2.0
1.5
1.0
0.5
20
16
12
8
4
0
0
Test Condition :
Drain to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Power vs. Temperature Derating
Ambient Temperature
Typical Output Characteristics
2 V
1
50
10 V
4 V
2
100
V
3
GS
Pulse Test
= 1.5 V
150
Ta (°C)
V
DS
4
(V)
200
5
0.03
0.01
100
0.3
0.1
30
10
20
16
12
3
1
0.1
8
4
0
Drain to Source Voltage
Note 4 :
Ta = 25 °C
1 shot Pulse
Operation in
this area is
limited by R
Gate to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Maximum Safe Operation Area
Typical Transfer Characteristics
0.3
1
1
DS(on)
2
3
75 °C
25 °C
100 µs
Tc = –25 °C
3
10 µs
10
V
Pulse Test
DS
V
V
HAT2049T
DS
GS
30
= 10 V
4
(V)
(V)
100
5
3