hat2092r Renesas Electronics Corporation., hat2092r Datasheet - Page 3

• Manufacturer Part Number: hat2092r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2092R
Main Characteristics
Rev.3.00 Jan. 13, 2005 page 3 of 7
0.20
0.16
0.12
0.08
0.04
4.0
3.0
2.0
1.0
50
40
30
20
10
0
0
0
Test Condition :
Drain to Source Saturation Voltage vs.
Drain to Source Voltage
Gate to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Power vs. Temperature Derating
4.5 V
Ambient Temperature
Typical Output Characteristics
10 V
2
4
50
Gate to Source Voltage
4
8
4 V
100
12
3.5 V
6
I
D
2 A
5 A
= 10 A
Pulse Test
150
Pulse Test
Ta (°C)
V
V
DS
16
GS
8
(V)
(V)
200
20
10
0.01
100
500
100
0.1
50
40
30
20
10
50
20
10
10
1
5
2
1
0
Static Drain to Source on State Resistance
0.1
0.1
Pulse Test
Note 4 :
Operation in
this area is
limited by R
Ta = 25°C
1 shot Pulse
Drain to Source Voltage
Gate to Source Voltage
V
Pulse Test
0.2
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
DS
Maximum Safe Operation Area
0.3
= 10 V
1
0.5
Drain Current
Tc = 75°C
vs. Drain Current
1
1
DS(on)
V
GS
2
2
= 4.5 V
10 V
3
5
3
10 µs
10
I
10
D
-25°C
V
V
25°C
20
(A)
GS
DS
4
30
(V)
50
(V)
100
100
5