hat2024r Renesas Electronics Corporation., hat2024r Datasheet - Page 3

• Manufacturer Part Number: hat2024r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2024R
Main Characteristics
Rev.5.00 Sep 07, 2005 page 3 of 7
4.0
3.0
2.0
1.0
0.5
0.4
0.3
0.2
0.1
20
16
12
0
8
4
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
10 V
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
Gate to Source Voltage
8 V
2
2
50
6 V
4
4
100
5 V
6
6
V
150
GS
Pulse Test
Pulse Test
Ta (°C)
I
V
V
D
8
= 2.5 V
8
GS
DS
= 5 A
2 A
1 A
4.5 V
3.5 V
4 V
3 V
(V)
(V)
200
10
10
0.03
0.01
0.05
0.02
0.01
100
0.3
0.1
Static Drain to Source on State Resistance
0.5
0.2
0.1
30
10
20
16
12
3
1
8
4
0
1
0.1
0.2
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot Pulse
1 Drive Operation
Pulse Test
Operation in
this area is
limited by R
Note 5:
Typical Transfer Characteristics
Maximum Safe Operation Area
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.3
0.5
–25°C
Drain Current
2
25°C
vs. Drain Current
1
1
DS (on)
4
V
GS
3
2
= 4 V
10 V
6
Tc = 75°C
I
10
D
V
Pulse Test
5
DS
(A)
10 µs
V
V
= 10 V
8
30
GS
DS
10
(V)
(V)
100
10
20