hat2058r Renesas Electronics Corporation., hat2058r Datasheet - Page 4

• Manufacturer Part Number: hat2058r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2058R, HAT2058RJ
Rev.2.00 Sep 07, 2005 page 4 of 7
1000
500
200
100
200
160
120
Static Drain to Source on State Resistance
0.5
0.4
0.3
0.2
0.1
50
20
10
80
40
0
–40
0
0.1
0
I
Reverse Drain Current I
Pulse Test
D
Case Temperature
Dynamic Input Characteristics
V
= 4 A
DS
0.3
V
Body-Drain Diode Reverse
Gate Charge
V
GS
10 V
0
8
DD
= 4 V
= 80 V
vs. Temperature
Recovery Time
50 V
25 V
1
I
40
16
D
= 1 A, 2 A
di / dt = 50 A / µs
V
V
3
GS
DD
1 A, 2 A
80
24
= 0, Ta = 25°C
= 80 V
Qg (nc)
10
50 V
25 V
Tc
V
DR
120
GS
32
4 A
30
(°C)
4 A
(A)
160
100
40
20
16
12
8
4
0
5000
2000
1000
1000
500
200
300
100
100
0.5
50
20
10
50
20
10
30
10
5
2
1
3
1
0.1
0.1
0
Drain to Source Voltage V
V
f = 1 MHz
Forward Transfer Admittance vs.
GS
t f
0.3
0.3
= 0
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
10
Drain Current
Drain Current I
25°C
t r
t d(off)
Drain Current
1
1
V
PW = 5 µs, duty ≤ 1 %
20
Tc = –25°C
GS
75°C
3
3
= 10 V, V
t d(on)
30
I
10
10
D
D
V
Pulse Test
DS
DD
(A)
(A)
= 10 V
40
30
DS
= 30 V
30
Coss
Crss
Ciss
(V)
100
100
50