hat2131r Renesas Electronics Corporation., hat2131r Datasheet - Page 2

• Manufacturer Part Number: hat2131r
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2131R
Electrical Characteristics
Notes: 3. Pulse test
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 2 of 6
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Item
Symbol
V
R
R
V
Coss
(BR)DSS
Crss
Ciss
t
t
Qgs
Qgd
|yfs|
I
I
GS(off)
V
DS(on)
DS(on)
Qg
d(on)
d(off)
DSS
GSS
t
t
t
DF
rr
r
f
Min
350
1.0
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
460
220
2.0
2.5
2.6
0.8
32
15
13
76
50
20
—
—
—
—
8
1
6
Max
0.1
2.5
3.0
3.2
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
0.1
Unit
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
V
A
A
V
I
I
I
V
V
I
I
V
V
f = 1 MHz
I
V
R
Rg = 10
V
V
I
I
di
D
D
D
D
D
D
F
F
DS
GS
DS
DS
GS
GS
DD
GS
L
F
= 0.9 A, V
= 0.9 A, V
= 10 mA, V
= 0.45 A, V
= 0.45 A, V
= 0.45 A, V
= 0.45 A
= 0.9 A
/dt = 100 A/ s
= 556
= 350 V, V
= 10 V, I
= 25 V
= 20 V, V
= 0
= 10 V
= 250 V
= 10 V
Test conditions
GS
GS
D
GS
DS
GS
GS
= 1 mA
GS
DS
= 0
= 0
= 0
= 10 V
= 10 V
= 4 V
= 0
= 0
(Ta = 25°C)
Note3
Note3
Note3
Note3