hat2164h05 Renesas Electronics Corporation., hat2164h05 Datasheet - Page 4

• Manufacturer Part Number: hat2164h05
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2164H
Rev.5.00 Sep 26, 2005 page 4 of 7
100
Static Drain to Source on State Resistance
50
20
10
-25
50
40
30
20
10
8
6
4
2
0
0.1
0
10 V
5 V
Pulse Test
I
V
Reverse Drain Current
D
DD
Case Temperature
Dynamic Input Characteristics
V
= 60 A
0
0.3
GS
Body-Drain Diode Reverse
V
10 V
= 25 V
Gate Charge
40
DS
= 4.5 V
25
vs. Temperature
Recovery Time
1
80
50
V
di / dt = 100 A / µs
V
DD
GS
3
= 5 V
75
10 V
25 V
120
10 A, 20 A, 50 A
= 0, Ta = 25°C
I
50 A
D
Qg (nc)
= 10 A, 20 A
10
100 125 150
Tc
160
I
DR
30
V
(°C)
GS
(A)
200
100
20
16
12
8
4
0
10000
1000
3000
1000
1000
300
100
300
100
300
100
0.3
0.1
30
10
30
10
30
10
0.1 0.2
3
1
3
0.1
0
t d(on)
Drain to Source Voltage V
t r
Forward Transfer Admittance vs.
0.3
Tc = -25°C
5
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
0.5
Drain Current
Drain Current I
10
1
1
Drain Current
V
Rg = 4.7
GS
25°C
t f
t d(off)
15
3
2
= 10 V, V
5
Ω
20
10
10
, duty ≤ 1 %
I
75°C
V
Pulse Test
D
D
DS
V
f = 1 MHz
DS
(A)
20
(A)
GS
= 10 V
= 10 V
30
DS
25
= 0
Coss
Crss
Ciss
50
(V)
100
100
30