hat2168n Renesas Electronics Corporation., hat2168n Datasheet - Page 3

• Manufacturer Part Number: hat2168n
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2168N
Main Characteristics
REJ03G1682-0200 Rev.2.00 May 27, 2008
Page 3 of 6
250
200
150
100
40
30
20
10
50
40
30
20
10
50
0
0
Drain to Source Saturation Voltage vs.
0
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature Tc ( C)
10 V
4.5 V
Gate to Source Voltage
2
4
50
4
8
100
12
6
Pulse Test
150
Pulse Test
I
D
16
3.2 V
8
GS
DS
= 20 A
3.0 V
2.8 V
2.6 V
10 A
5 A
(V)
(V)
200
10
20
0.01
100
500
100
Static Drain to Source on State Resistance
0.1
50
20
10
10
50
40
30
20
10
5
2
1
1
0
0.1
1
Drain to Source Voltage V
Gate to Source Voltage V
Pulse Test
V
Operation in
this area is
limited by R
Ta = 25 C
1 shot Pulse
10 V
Typical Transfer Characteristics
V
Pulse Test
Maximum Safe Operation Area
GS
DS
0.3
0.3
= 4.5 V
Tc = 75 C
= 10 V
1
Drain Current I
vs. Drain Current
10
1
DS(on)
2
3
3
25 C
-25 C
3
10 s
100
10
D
(A)
GS
DS
4
30
30
(V)
(V)
1000
100
5