k6t1008v2c-gf70 Samsung Semiconductor, Inc., k6t1008v2c-gf70 Datasheet - Page 2

• Manufacturer Part Number: k6t1008v2c-gf70
• Description: 128k X8 Bit Low Power And Low Voltage Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

VSS
I/O1
I/O2
I/O3
128K x8 bit Low Power and Low Voltage CMOS Static RAM
N.C
A16
A14
A12
K6T1008V2C, K6T1008U2C Family
FEATURES
PRODUCT FAMILY
PIN DESCRIPTION
A7
A6
A5
A4
A3
A2
A1
A0
K6T1008V2C-B
K6T1008U2C-B
K6T1008V2C-D
K6T1008U2C-D
K6T1008V2C-F
K6T1008U2C-F
K6T1008V2C family: 3.0~3.6V
K6T1008U2C family: 2.7~3.3V
Process Technology: 0.4 m CMOS
Organization: 128K x8
Power Supply Voltage:
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-SOP-525, 32-TSOP1-0820F/R,
Product Family
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-SOP
CS
I/O
Name
A
0
WE
Vcc
Vss
N.C
OE
1
1
~A
, CS
~I/O
16
32-TSOP1-0813.4F/R
8
2
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
Operating Temperature
VCC
VCC
CS2
CS2
A14
A11
A13
A15
A16
A14
A12
A12
A16
A15
A13
A11
Commercial(0~70 C)
WE
Extended(-25~85 C)
WE
Industrial(-40~85 C)
NC
NC
A9
A5
A6
A7
A8
A7
A6
A5
A4
A4
A8
A9
Chip Select Inputs
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
Power
Ground
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
Type1-Reverse
Type1-Forward
32-
32-
Function
32-TSOP
32-TSOP
S
S
TSOP
TSOP
Vcc Range
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS1
A10
OE
2
70/100ns
85/100ns
70/100ns
85/100ns
70/100ns
85/100ns
GENERAL DESCRIPTION
SAMSUNG s advanced CMOS process technology. The fami-
lies support various operating temperature ranges and have
various package types for user flexibility of system design. The
families also supports low data retention voltage for battery
back-up operation with low data retention current.
FUNCTIONAL BLOCK DIAGRAM
The K6T1008V2C and K6T1008U2C families are fabricated by
Speed
CS1
CS2
WE
OE
I/O
I/O
1
8
Control
logic
A4
A5
A6
A7
A8
A12
A13
A14
A15
A16
(I
Standby
SB1
10 A
Power Dissipation
, Max)
Clk gen.
Row
select
Data
cont
(I
Operating
CC2
35mA
A10 A0
, Max)
CMOS SRAM
Precharge circuit.
Memory array
1024 rows
128 8 columns
Column select
I/O Circuit
A1 A2 A3
32-SOP
32-TSOP1-F/R
32-sTSOP1-F/R
November 1997
PKG Type
A9
Revision 2.0
A11
V
V
SS
CC